| PART |
Description |
Maker |
| SDR647CTS1 SDR647CTS1S SDR647CTS1TX SDR647CTS1TXV |
50 AMP 300-700 Volts 35 nsec Centertap Rectifier
|
Solid States Devices, Inc
Solid States Devices, I...
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| SPD810SMS SPD810SMSS SPD810SMSTX SPD810SMSTXV SPD8 |
8AMP 50-300 VOLTS 40 nsec Hyper Fast Rectifier
|
Solid States Devices, I...
Solid States Devices, Inc
|
| SDR5807CT/5 SDR5811CT/5 SDR5809CT/5 |
12 AMPS 50 - 300 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| SDR6642 SDR6643 SDR4150 SDR6638 |
300 mA 50 - 125 VOLTS 4.5 - 6.0 nsec HYPER FAST RECOVERY RECTIFIER
|
Solid States Devices, Inc
Solid State Optronic
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SDR959_3 SDR9510_3 SDR9511_3 SDR958_3 SDR958-3 SDR |
50 AMP 800-1100 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
Solid States Devices, I...
|
| SPD1510HF SPD1510SMSS SPD1510SMSTX SPD1515BT SPD15 |
15 AMP HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS, 30 nsec
|
Solid States Devices, I...
|
| SDR818 SDR803 SDR804 SDR805 SDR806 SDR807 SDR808 S |
100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR627-59 SDR628/59 |
20 AMP 700-800 VOLTS 60 nsec ULTRA FAST RECTIFIER
|
Solid States Devices, Inc.
|
